Evaluation of interface property and DC characteristics enhancement in nanoscale n-channel metal-oxide-semiconductor field-effect transistor using stress memorization technique

Physics & Astronomy

• tensile stress 87%
• metal oxide semiconductors 87%
• field effect transistors 67%
• direct current 66%
• evaluation 54%
• augmentation 52%
• scattering coefficients 48%
• pumping 36%
• attenuation 33%
• low frequencies 30%
• performance 18%

Engineering & Materials Science

• MOSFET devices 100%
• Tensile stress 42%
• Scattering 20%