Evaluation of strain measurement in a die-to-interposer chip using in situ synchrotron X-Ray diffraction and finite-element analysis

Hsueh Hsien Hsu, Tz Cheng Chiu, Tao Chih Chang, Shin Yi Huang, Hsin Yi Lee, Ching Shun Ku, Yang Yi Lin, Chien Hao Su, Li Wei Chou, Yao Tsung Ouyang, Yi Ting Huang, Albert T. Wu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

To decrease the size of portable devices, this study incorporates a stacked three-dimensional integrated circuit architecture into advanced packaging techniques. The traditional FR-4 substrate was substituted with silicon interposers. Because silicon is rigid and highly resistant to deformation, this minimizes thermal stress caused by thermal expansion mismatch in the structure. This study shows that underfill applied stress to the dies when the temperature was varied, threatening the devices. Damage was most likely to occur at the die corners. The stresses were measured in situ at different temperatures using synchrotron radiation x-ray analysis. Simulation results confirm the measured data trends.

原文English
頁(從 - 到)52-56
頁數5
期刊Journal of Electronic Materials
43
發行號1
DOIs
出版狀態Published - 2014 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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