The warpage induced during the manufacturing process affects the yield, quality, and reliability of the semiconductor packages. Unavoidable and severe stress and deformation are observed because of incompatible of thermal expansion coefficient (CTE) of the materials such as the copper and ceramic that are commonly used in the semiconductor industry. The warpage and induced stress can be an unaccounted hazard that may affect the long-term durability and reliability of the semiconductor component. This paper investigates the effect of adding and removing channels to the semiconductor composite to reduce the warpage due to CTE mismatch. The effects adding or reducing the size of the channels was quantitatively examined through ANSYS simulation. A finite element method employing the thermomechanical behavior of the composite material were established to predict the effects of the channels to the warpage developed within the manufacturing process. Simulation results shows that channels can reduce the warpage by 48.76%. The proposed method was found to be effective in the reduction of warpage of the composite materials via the thermomechanical analysis using finite element method validated by values found in the available literature.