Evidence for formation of multi-quantum dots in hydrogenated graphene

Chiashain Chuang, Reuben K. Puddy, Malcolm R. Connolly, Shun Tsung Lo, Huang De Lin, Tse Ming Chen, Charles G. Smith, Chi Te Liang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated single-layer graphene flake. The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device. The resulting Coulomb blockade diamonds shown in the color scale plot together with the number of Coulomb peaks exhibit the characteristics of the so-called 'stochastic Coulomb blockade'. A possible explanation for the formation of the multi-quantum dots, which is not observed in pristine graphene to date, was attributed to the impurities and defects unintentionally decorated on a single-layer graphene flake which was not treated with the thermal annealing process. Graphene multi-quantum dots developed around impurities and defect sites during the hydrogen plasma exposure process.

原文English
文章編號459
期刊Nanoscale Research Letters
7
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學

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