Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition

T. S. Yeoh, C. P. Liu, Y. W. Kim, J. J. Coleman

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

原文English
頁(從 - 到)O8.7.1-O8.7.5
期刊Materials Research Society Symposium - Proceedings
672
DOIs
出版狀態Published - 2001
事件Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States
持續時間: 2001 4月 172001 4月 20

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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