InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.
|頁（從 - 到）
|Materials Research Society Symposium - Proceedings
|Published - 2001
|Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States
持續時間: 2001 4月 17 → 2001 4月 20
All Science Journal Classification (ASJC) codes