Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

Bin Fang, Mario Carpentieri, Steven Louis, Vasyl Tiberkevich, Andrei Slavin, Ilya N. Krivorotov, Riccardo Tomasello, Anna Giordano, Hongwen Jiang, Jialin Cai, Yaming Fan, Zehong Zhang, Baoshun Zhang, Jordan A. Katine, Kang L. Wang, Pedram Khalili Amiri, Giovanni Finocchio, Zhongming Zeng

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.

原文English
文章編號014022
期刊Physical Review Applied
11
發行號1
DOIs
出版狀態Published - 2019 1月 10

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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