Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)