Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Chia Yun Chen; Yu Rui Liu

doi:10.1039/c4cp04237a

Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Chia Yun Chen, Yu Rui Liu

材料科學及工程學系

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.

原文	English
頁（從 - 到）	26711-26714
頁數	4
期刊	Physical Chemistry Chemical Physics
卷	16
發行號	48
DOIs	https://doi.org/10.1039/c4cp04237a
出版狀態	Published - 2014 十一月 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1039/c4cp04237a

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