Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Chia Yun Chen, Yu Rui Liu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.

原文English
頁(從 - 到)26711-26714
頁數4
期刊Physical Chemistry Chemical Physics
16
發行號48
DOIs
出版狀態Published - 2014 十一月 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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