TY - GEN
T1 - External field effects on photoluminescence properties of blue InGaN quantum-well diodes
AU - Inoue, T.
AU - Fujiwara, K.
AU - Sheu, J. K.
PY - 2006
Y1 - 2006
N2 - Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination of PL intensity under the reverse bias conditions.
AB - Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination of PL intensity under the reverse bias conditions.
UR - http://www.scopus.com/inward/record.url?scp=44849096241&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44849096241&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2006.4429864
DO - 10.1109/COMMAD.2006.4429864
M3 - Conference contribution
AN - SCOPUS:44849096241
SN - 1424405785
SN - 9781424405787
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 7
EP - 10
BT - COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
T2 - 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
Y2 - 6 December 2006 through 8 December 2006
ER -