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External field effects on photoluminescence properties of blue InGaN quantum-well diodes
T. Inoue
, K. Fujiwara
,
J. K. Sheu
光電科學與工程學系
研究成果
:
Conference contribution
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指紋
指紋
深入研究「External field effects on photoluminescence properties of blue InGaN quantum-well diodes」主題。共同形成了獨特的指紋。
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Keyphrases
Diode
100%
Photoluminescence Intensity
100%
External Field Effect
100%
Photoluminescence Properties
100%
InGaN Quantum Wells
100%
Light-emitting Diodes
50%
Reverse Bias
50%
Escape Mechanism
50%
Photoexcitation
50%
Bias Conditions
50%
Power Dependence
50%
Blue Emission
50%
Excitation Power
50%
Intensity Reduction
50%
Emission Band
50%
External Field
50%
Reverse Bias Voltage
50%
Engineering
Quantum Well
100%
Reverse Bias
100%
External Field
100%
Light-Emitting Diode
50%
Bias Voltage
50%
Emission Band
50%
Physics
Field Effect
100%
Photoluminescence
100%
Quantum Wells
100%
Light Emitting Diode
25%
Photoexcitation
25%
Chemistry
Photoluminescence
100%
Field Effect
100%
Photoexcitation
25%
Material Science
Quantum Well
100%
Photoluminescence
100%
Light-Emitting Diode
25%