Extremely anisotropic single-crystal growth in nanotwinned copper

Chia Ling Lu, Han Wen Lin, Chien Min Liu, Yi Sa Huang, Tien Lin Lu, Tao Chi Liu, Hsiang Yao Hsiao, Chih Chen, Jui Chao Kuo, King Ning Tu

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

By electroplating of nearly unidirectionally <111>-oriented nanotwinned and fine-grained Cu on a Si wafer surface followed by annealing at 400-500 °C for up to 1 h, we grew many extremely large <100>-oriented single crystals of Cu with sizes ranging from 200 to 400 μm. By patterning and annealing the nanotwinned Cu films, we grew an array of <100>-oriented single crystals of Cu with sizes ranging from 25 to 100 μm on Si. In comparison, single-crystal nano-wire growth is a one-dimensional anisotropic growth process, in which the growth along the axial direction is much faster than in the radial direction. We report here a bulk-type two-dimensional crystal growth of an array of numerous <100>-oriented single crystals of Cu on Si. This growth process has the potential for microbump applications in three-dimensional integrated circuit-packaging technology for hand-held consumer electronic products.

原文English
文章編號e135
期刊NPG Asia Materials
6
發行號10
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

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