Fabrication AlGaN/GaN MIS UV photodetector by H2O2 Oxidation

Han Yin Liu, Wei Chou Hsu, Bo Yi Chou, Yi Hsuan Wang

研究成果: Article

9 引文 (Scopus)

摘要

This letter demonstrates and investigates AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H2O2 oxidation technique is adopted to grow an insulator layer. The material qualitative and semiquantitative analyses of the H2O2-grown aluminum oxide are studied by energy dispersive X-ray spectroscopy The performances of the present MIS-UV-PD with different H2O2 treatment time are also investigated. The MIS-PD with 5-min H2O2 treatment time has the optimum performances. The dark current is suppressed from 4.23 nA to 5.15 pA at-10 V. The responsivity and the UV to visible rejection ratio are enhanced to 1.03× 10-2 A/W and 3.38 × 105. Moreover, the noise equivalent power and detectivity are determined to be 4.8 × 10-11 W and 4.52× 1010 cmHz0.5 W-1. This cost-effective oxidation technique provides a simple approach to fabricate AlGaN/GaN MIS-UV-PD and its performances are also improved.

原文English
文章編號6922481
頁(從 - 到)101-104
頁數4
期刊IEEE Photonics Technology Letters
27
發行號1
DOIs
出版狀態Published - 2015 一月 1

指紋

Management information systems
MIS (semiconductors)
Photodetectors
photometers
Metals
Semiconductor materials
Fabrication
Oxidation
oxidation
fabrication
Aluminum Oxide
Dark currents
costs
Costs
dark current
rejection
Aluminum
Oxides
aluminum oxides
insulators

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Liu, Han Yin ; Hsu, Wei Chou ; Chou, Bo Yi ; Wang, Yi Hsuan. / Fabrication AlGaN/GaN MIS UV photodetector by H2O2 Oxidation. 於: IEEE Photonics Technology Letters. 2015 ; 卷 27, 編號 1. 頁 101-104.
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Fabrication AlGaN/GaN MIS UV photodetector by H2O2 Oxidation. / Liu, Han Yin; Hsu, Wei Chou; Chou, Bo Yi; Wang, Yi Hsuan.

於: IEEE Photonics Technology Letters, 卷 27, 編號 1, 6922481, 01.01.2015, p. 101-104.

研究成果: Article

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AB - This letter demonstrates and investigates AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H2O2 oxidation technique is adopted to grow an insulator layer. The material qualitative and semiquantitative analyses of the H2O2-grown aluminum oxide are studied by energy dispersive X-ray spectroscopy The performances of the present MIS-UV-PD with different H2O2 treatment time are also investigated. The MIS-PD with 5-min H2O2 treatment time has the optimum performances. The dark current is suppressed from 4.23 nA to 5.15 pA at-10 V. The responsivity and the UV to visible rejection ratio are enhanced to 1.03× 10-2 A/W and 3.38 × 105. Moreover, the noise equivalent power and detectivity are determined to be 4.8 × 10-11 W and 4.52× 1010 cmHz0.5 W-1. This cost-effective oxidation technique provides a simple approach to fabricate AlGaN/GaN MIS-UV-PD and its performances are also improved.

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