Fabrication and characteristics of silicon micro-tip arrays

Kuan Jen Chen, Te Hua Fang, Liang Wen Ji, Shoou Jinn Chang, Sheng Joue Young

研究成果: Article

1 引文 (Scopus)

摘要

Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.

原文English
頁(從 - 到)5601-5611
頁數11
期刊International Journal of Modern Physics B
24
發行號28
DOIs
出版狀態Published - 2010 十一月 10

指紋

field emission
fabrication
silicon
critical loading
packing density
plasma etching
buckling
nanoindentation
cones
emitters
lithography
etching
radii
augmentation
electric potential

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

引用此文

Chen, Kuan Jen ; Fang, Te Hua ; Ji, Liang Wen ; Chang, Shoou Jinn ; Young, Sheng Joue. / Fabrication and characteristics of silicon micro-tip arrays. 於: International Journal of Modern Physics B. 2010 ; 卷 24, 編號 28. 頁 5601-5611.
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Fabrication and characteristics of silicon micro-tip arrays. / Chen, Kuan Jen; Fang, Te Hua; Ji, Liang Wen; Chang, Shoou Jinn; Young, Sheng Joue.

於: International Journal of Modern Physics B, 卷 24, 編號 28, 10.11.2010, p. 5601-5611.

研究成果: Article

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