TY - JOUR
T1 - Fabrication and characteristics of silicon micro-tip arrays
AU - Chen, Kuan Jen
AU - Fang, Te Hua
AU - Ji, Liang Wen
AU - Chang, Shoou Jinn
AU - Young, Sheng Joue
N1 - Funding Information:
This work was partially supported by the National Science Council of Taiwan under Grant No. NSC 95-2221-E150-033. The authors would like to thank National Nano Device Laboratories of Taiwan for providing inductively coupled plasma etching system.
PY - 2010/11/10
Y1 - 2010/11/10
N2 - Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.
AB - Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.
UR - http://www.scopus.com/inward/record.url?scp=79951552855&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951552855&partnerID=8YFLogxK
U2 - 10.1142/S0217979210055159
DO - 10.1142/S0217979210055159
M3 - Article
AN - SCOPUS:79951552855
SN - 0217-9792
VL - 24
SP - 5601
EP - 5611
JO - International Journal of Modern Physics B
JF - International Journal of Modern Physics B
IS - 28
ER -