Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes

H. T. Hsueh, S. J. Chang, W. Y. Weng, C. L. Hsu, T. J. Hsueh, F. Y. Hung, S. L. Wu, B. T. Dai

研究成果: Article

39 引文 斯高帕斯(Scopus)

摘要

The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu 2O/ZnO nanowire photodiode, Cu 4O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O 2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10 -11, 3.8 × 10 -10, and 7.2 × 10 -8 W while normalized detectivities were 6.35 × 10 9, 1.02 × 10 9, and 5.37 × 10 6 cmHz 0.5 W -1 for the fabricated Cu 2O/ZnO nanowire photodiode, Cu 4 O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.

原文English
文章編號5876323
頁(從 - 到)127-133
頁數7
期刊IEEE Transactions on Nanotechnology
11
發行號1
DOIs
出版狀態Published - 2012 一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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