@article{5245f5d2b5114f7b96ff47d299b2f46d,
title = "Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes",
abstract = "The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu 2O/ZnO nanowire photodiode, Cu 4O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O 2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10 -11, 3.8 × 10 -10, and 7.2 × 10 -8 W while normalized detectivities were 6.35 × 10 9, 1.02 × 10 9, and 5.37 × 10 6 cmHz 0.5 W -1 for the fabricated Cu 2O/ZnO nanowire photodiode, Cu 4 O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.",
author = "Hsueh, {H. T.} and Chang, {S. J.} and Weng, {W. Y.} and Hsu, {C. L.} and Hsueh, {T. J.} and Hung, {F. Y.} and Wu, {S. L.} and Dai, {B. T.}",
note = "Funding Information: Manuscript received June 1, 2010; revised; accepted June 7, 2011. Date of publication June 16, 2011; date of current version January 11, 2012. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education, TAIWAN. This work was also supported in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract No. 98-D0204-6. The review of this paper was arranged by Associate Editor E. T. Yu.",
year = "2012",
month = jan,
doi = "10.1109/TNANO.2011.2159620",
language = "English",
volume = "11",
pages = "127--133",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}