Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate

Kuan Ting Liu, Shoou Jinn Chang, Sean Wu

研究成果: Conference contribution

摘要

GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.

原文English
主出版物標題Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering
主出版物子標題Innovation, Science and Engineering, IEEE-ICAMSE 2016
編輯Teen-Hang Meen, Stephen D. Prior, Artde Donald Kin-Tak Lam
發行者Institute of Electrical and Electronics Engineers Inc.
頁面401-403
頁數3
ISBN(電子)9781509038695
DOIs
出版狀態Published - 2017 二月 2
事件2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016 - Tainan, Taiwan
持續時間: 2016 十一月 122016 十一月 13

出版系列

名字Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016

Other

Other2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016
國家Taiwan
城市Tainan
期間16-11-1216-11-13

指紋

Aluminum Oxide
Photodetectors
Sapphire
Fabrication
Substrates
Metals
Dark currents
Metallorganic chemical vapor deposition
Photocurrents
Scattering
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Civil and Structural Engineering
  • Mechanics of Materials
  • Media Technology
  • Materials Science (miscellaneous)
  • Electronic, Optical and Magnetic Materials

引用此文

Liu, K. T., Chang, S. J., & Wu, S. (2017). Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. 於 T-H. Meen, S. D. Prior, & A. D. K-T. Lam (編輯), Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016 (頁 401-403). [7840357] (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICAMSE.2016.7840357
Liu, Kuan Ting ; Chang, Shoou Jinn ; Wu, Sean. / Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. 編輯 / Teen-Hang Meen ; Stephen D. Prior ; Artde Donald Kin-Tak Lam. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 401-403 (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).
@inproceedings{7ad068c90d2f47dfb24d4dd02a4bea32,
title = "Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate",
abstract = "GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.",
author = "Liu, {Kuan Ting} and Chang, {Shoou Jinn} and Sean Wu",
year = "2017",
month = "2",
day = "2",
doi = "10.1109/ICAMSE.2016.7840357",
language = "English",
series = "Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "401--403",
editor = "Teen-Hang Meen and Prior, {Stephen D.} and Lam, {Artde Donald Kin-Tak}",
booktitle = "Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering",
address = "United States",

}

Liu, KT, Chang, SJ & Wu, S 2017, Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. 於 T-H Meen, SD Prior & ADK-T Lam (編輯), Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016., 7840357, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016, Institute of Electrical and Electronics Engineers Inc., 頁 401-403, 2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016, Tainan, Taiwan, 16-11-12. https://doi.org/10.1109/ICAMSE.2016.7840357

Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. / Liu, Kuan Ting; Chang, Shoou Jinn; Wu, Sean.

Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. 編輯 / Teen-Hang Meen; Stephen D. Prior; Artde Donald Kin-Tak Lam. Institute of Electrical and Electronics Engineers Inc., 2017. p. 401-403 7840357 (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

研究成果: Conference contribution

TY - GEN

T1 - Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate

AU - Liu, Kuan Ting

AU - Chang, Shoou Jinn

AU - Wu, Sean

PY - 2017/2/2

Y1 - 2017/2/2

N2 - GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.

AB - GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.

UR - http://www.scopus.com/inward/record.url?scp=85015193719&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015193719&partnerID=8YFLogxK

U2 - 10.1109/ICAMSE.2016.7840357

DO - 10.1109/ICAMSE.2016.7840357

M3 - Conference contribution

AN - SCOPUS:85015193719

T3 - Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016

SP - 401

EP - 403

BT - Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering

A2 - Meen, Teen-Hang

A2 - Prior, Stephen D.

A2 - Lam, Artde Donald Kin-Tak

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Liu KT, Chang SJ, Wu S. Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. 於 Meen T-H, Prior SD, Lam ADK-T, 編輯, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 401-403. 7840357. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016). https://doi.org/10.1109/ICAMSE.2016.7840357