Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.
|頁（從 - 到）||353-355|
|期刊||IEEE Transactions on Electron Devices|
|出版狀態||Published - 1975 6月|
All Science Journal Classification (ASJC) codes