Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

K. L. Wang; P. V. Gray

doi:10.1109/T-ED.1975.18137

Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

K. L. Wang, P. V. Gray

電機資訊學院

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.

原文	English
頁（從 - 到）	353-355
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	22
發行號	6
DOIs	https://doi.org/10.1109/T-ED.1975.18137
出版狀態	Published - 1975 6月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/T-ED.1975.18137

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引用此

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abstract = "Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.",

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AB - Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.

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Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

摘要

All Science Journal Classification (ASJC) codes

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