Fabrication and characterization of In_0.25Ga_0.75N/GaN multiple quantum wells embedded in nanorods

In_0.25Ga_0.75N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl₂/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm ². These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.