Fabrication and electrical characteristics of graphene-based charge-trap memory devices

Sejoon Lee, Sung Min Kim, Emil B. Song, Kang L. Wang, David H. Seo, Sunae Seo

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Graphene-based non-volatile charge-trap memory devices were fabricated and characterized to investigate the implementation effect of both 2-dimensional graphene and the 3-dimensional memory structure. The single-layer-graphene (SLG) channel devices exhibit larger memory windows compared to the multi-layer-graphene (MLG) channel devices. This originates from the gate-coupling strength being larger in SLG devices than in MLG devices. Namely, the electrostatic charge screening effect becomes enhanced upon increasing the number of graphene layers; therefore, the gate tunability is reduced in MLG compared to SLG. The results suggest that SLG is more desirable for memory applications than MLG.

原文English
頁(從 - 到)108-112
頁數5
期刊Journal of the Korean Physical Society
61
發行號1
DOIs
出版狀態Published - 2012 七月

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

指紋

深入研究「Fabrication and electrical characteristics of graphene-based charge-trap memory devices」主題。共同形成了獨特的指紋。

引用此