摘要
InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.
原文 | English |
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頁(從 - 到) | 607-608 |
頁數 | 2 |
期刊 | OSA Trends in Optics and Photonics Series |
卷 | 97 |
出版狀態 | Published - 2004 |
事件 | International Quantum Electronics Conference, IQEC - San Francisco, CA, United States 持續時間: 2004 5月 21 → 2004 5月 26 |
All Science Journal Classification (ASJC) codes
- 一般工程