Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

T. H. Hsueh, Y. S. Chang, F. Lai, H. W. Huang, M. C. Ou-yang, C. W. Chang, H. C. Kuo, S. C. Wang, J. K. Sheu

研究成果: Conference article

摘要

InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

原文English
頁(從 - 到)607-608
頁數2
期刊OSA Trends in Optics and Photonics Series
97
出版狀態Published - 2004 一月 1
事件International Quantum Electronics Conference, IQEC - San Francisco, CA, United States
持續時間: 2004 五月 212004 五月 26

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • 引用此

    Hsueh, T. H., Chang, Y. S., Lai, F., Huang, H. W., Ou-yang, M. C., Chang, C. W., Kuo, H. C., Wang, S. C., & Sheu, J. K. (2004). Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods. OSA Trends in Optics and Photonics Series, 97, 607-608.