FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Y. Tzeng, T. H. Lin, J. L. Davidson, L. S. Lan

研究成果: Paper同行評審

4 引文 斯高帕斯(Scopus)

摘要

Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.

原文English
頁面187-190
頁數4
出版狀態Published - 1987 一月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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