Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.
|出版狀態||Published - 1987 一月 1|
All Science Journal Classification (ASJC) codes
- 工程 (全部)