Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes

研究成果: Review article同行評審

72 引文 斯高帕斯(Scopus)

摘要

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm-1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

原文English
頁(從 - 到)2218-2259
頁數42
期刊Materials
3
發行號4
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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