This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.
|頁（從 - 到）||12422-12426|
|期刊||Journal of Physical Chemistry C|
|出版狀態||Published - 2010 7月 29|
All Science Journal Classification (ASJC) codes