Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

Chih Han Chen, Shoou Jinn Chang, Sheng Po Chang, Meng Ju Li, I. Cherng Chen, Ting Jen Hsueh, An Di Hsu, Cheng Liang Hsu

研究成果: Article同行評審

57 引文 斯高帕斯(Scopus)

摘要

This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

原文English
頁(從 - 到)12422-12426
頁數5
期刊Journal of Physical Chemistry C
114
發行號29
DOIs
出版狀態Published - 2010 七月 29

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 能源(全部)
  • 物理與理論化學
  • 表面、塗料和薄膜

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