Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, T. Y. Tsai, B. T. Dai

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

The authors report the deposition of Cu2O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm2, respectively. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.

原文English
頁(從 - 到)572-580
頁數9
期刊Superlattices and Microstructures
49
發行號5
DOIs
出版狀態Published - 2011 5月

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 電氣與電子工程

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