The GaN ultraviolet metal-semiconductor-metal (MSM) photodetectors epitaxially grown on Si (111) and sapphire (0001) substrates were prepared and characterized. By implementing our elaborate AlN/AlGaN buffer multilayer scheme on Si, the maximum responsivity of n--GaN MSM photodetector with TiW transparent electrodes achieved at an incident wavelength of 359 nm was 0.187 A/W, which corresponds to the quantum efficiency of 64.7%. Furthermore, for a given bandwidth of 1 kHz and a given bias of 5 V, the corresponding noise equivalent power (NEP) of aforementioned photodetector was 1.53×10-12 W, which translates to a maximal detectivity (D*) of 1.31×1012 cm-Hz0.5W-1.
|頁（從 - 到）||10280-10292|
|期刊||International Journal of Electrochemical Science|
|出版狀態||Published - 2013 十月 2|
All Science Journal Classification (ASJC) codes