Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques

Shiue Lung Chen, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Bor We Liou

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO2and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.

原文English
頁(從 - 到)351-353
頁數3
期刊IEEE Photonics Technology Letters
19
發行號6
DOIs
出版狀態Published - 2007 三月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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