Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

Chih Cheng Wang; Hou Kuei Huang; Yeong Her Wang; Mau Phon Houng; Chang Luen Wu; Chian Sern Chang

doi:10.1016/j.sse.2004.03.003

Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

Chih Cheng Wang
, Hou Kuei Huang
, Yeong Her Wang
, Mau Phon Houng
, Chang Luen Wu
, Chian Sern Chang

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si₃N₄ passivated devices.

原文	English
頁（從 - 到）	1683-1686
頁數	4
期刊	Solid-State Electronics
卷	48
發行號	9
DOIs	https://doi.org/10.1016/j.sse.2004.03.003
出版狀態	Published - 2004 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/j.sse.2004.03.003

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title = "Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation",

abstract = "A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6\% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.",

author = "Wang, \{Chih Cheng\} and Huang, \{Hou Kuei\} and Wang, \{Yeong Her\} and Houng, \{Mau Phon\} and Wu, \{Chang Luen\} and Chang, \{Chian Sern\}",

note = "Funding Information: This work was supported in part by the National Science Council under contract NSC 91-2215-E-006-017, NSC92-2215-E006-008, MOE Program for Promoting Academic Excellent of Universities under the grant number A-91E-FA08-1-4 and the Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan.",

year = "2004",

month = sep,

doi = "10.1016/j.sse.2004.03.003",

language = "English",

volume = "48",

pages = "1683--1686",

journal = "Solid-State Electronics",

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T1 - Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

AU - Wang, Chih Cheng

AU - Huang, Hou Kuei

AU - Wang, Yeong Her

AU - Houng, Mau Phon

AU - Wu, Chang Luen

AU - Chang, Chian Sern

N1 - Funding Information: This work was supported in part by the National Science Council under contract NSC 91-2215-E-006-017, NSC92-2215-E006-008, MOE Program for Promoting Academic Excellent of Universities under the grant number A-91E-FA08-1-4 and the Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan.

PY - 2004/9

Y1 - 2004/9

N2 - A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.

AB - A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.

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UR - https://www.scopus.com/pages/publications/2942644395#tab=citedBy

U2 - 10.1016/j.sse.2004.03.003

DO - 10.1016/j.sse.2004.03.003

M3 - Article

AN - SCOPUS:2942644395

SN - 0038-1101

VL - 48

SP - 1683

EP - 1686

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

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