TY - JOUR
T1 - Fabrication of high-power piezoelectric transformers using lead-free ceramics for application in electronic ballasts
AU - Yang, Song Ling
AU - Chen, Shih Ming
AU - Tsai, Cheng Che
AU - Hong, Cheng Shong
AU - Chu, Sheng Yuan
PY - 2013
Y1 - 2013
N2 - CuO is doped into (Na0.5K0.5)NbO3 (NKN) ceramics to improve the piezoelectric properties and thus obtain a piezoelectric transformer (PT) with high output power. In X-ray diffraction patterns, the diffraction angles of the CuO-doped NKN ceramics shift to lower values because of an expansion of the lattice volume, thus inducing oxygen vacancies and enhancing the mechanical quality factor. A homogeneous microstructure is obtained when NKN is subjected to CuO doping, leading to improved electrical properties. PTs with different electrode areas are fabricated using the CuO-doped NKN ceramics. Considering the efficiency, voltage gain, and temperature rise of PTs at a load resistance of 1 kΩ, PTs with an electrode with an inner diameter of 15 mm are combined with the circuit design for driving a 13-W T5 fluorescent lamp. A temperature rise of 6°C and a total efficiency of 82.4% (PT and circuit) are obtained using the present PTs.
AB - CuO is doped into (Na0.5K0.5)NbO3 (NKN) ceramics to improve the piezoelectric properties and thus obtain a piezoelectric transformer (PT) with high output power. In X-ray diffraction patterns, the diffraction angles of the CuO-doped NKN ceramics shift to lower values because of an expansion of the lattice volume, thus inducing oxygen vacancies and enhancing the mechanical quality factor. A homogeneous microstructure is obtained when NKN is subjected to CuO doping, leading to improved electrical properties. PTs with different electrode areas are fabricated using the CuO-doped NKN ceramics. Considering the efficiency, voltage gain, and temperature rise of PTs at a load resistance of 1 kΩ, PTs with an electrode with an inner diameter of 15 mm are combined with the circuit design for driving a 13-W T5 fluorescent lamp. A temperature rise of 6°C and a total efficiency of 82.4% (PT and circuit) are obtained using the present PTs.
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U2 - 10.1109/TUFFC.2013.2577
DO - 10.1109/TUFFC.2013.2577
M3 - Article
C2 - 23357915
AN - SCOPUS:84873852883
SN - 0885-3010
VL - 60
SP - 408
EP - 413
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 2
M1 - 6416496
ER -