Fabrication of InP-based NnpnN heterojunction bipolar transistor

Chin-Hsing Chen, Y. K. Su

研究成果: Article同行評審

摘要

InGaAs(P)/InP double heterojunction bipolar transistors have been successfully fabricated by inserting an n-type InGaAsP (Eg=0.95 eV) quaternary (0.1 μm, undoped) layer on either side of the base by liquid-phase epitaxy (LPE). As we know, it is the first time to grow this structure by LPE. These devices have been fabricated using a non-self-aligned technology. In this case it can improve the common-emitter current/voltage (IC /V CE) characteristics. Small signal current gain hfe about 100 and dc current gain hFE about 80 at IC=38 mA can be obtained. The ideality factor of emitter-base junction is 1.43.

原文English
頁(從 - 到)826-829
頁數4
期刊Journal of Applied Physics
68
發行號2
DOIs
出版狀態Published - 1990 12月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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