Fabrication of nanopillars comprised of InGaN/GaN multiple quantum wells by focused ion beam milling

Shang En Wu, Yu Wen Huang, Tao Hung Hsueh, Chuan-Pu Liu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The focused ion beam direct-written InGaN/GaN multiple-quantum-well nanopillars display strong cathodoluminescence emission blue-shifted by 35 meV compared with that of the as-grown wafer. With the removal of ion-irradiation-damage layers, the emission intensity even increased by a factor of 15. The ion beam induced nanopillar swelling was deliberately enhanced by tuning the beam condition, and the swollen volume can also be easily removed by wet-etching using KOH solution. The swelling behavior of an InGaN/GaN nanopillar under focused ion beam milling is found to play an important rule in reducing pillar size.

原文English
頁(從 - 到)4906-4908
頁數3
期刊Japanese Journal of Applied Physics
47
發行號6 PART 2
DOIs
出版狀態Published - 2008 六月 20

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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