Fabrication of simple GaAs solar cell by Zn diffusion method

Sheng Po Chang

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier.

原文English
主出版物標題Advances in Applied Materials and Electronics Engineering II
頁面312-316
頁數5
DOIs
出版狀態Published - 2013
事件2nd International Conference on Applied Materials and Electronics Engineering, AMEE 2013 - Hong Kong, China
持續時間: 2013 四月 192013 四月 20

出版系列

名字Advanced Materials Research
684
ISSN(列印)1022-6680

Other

Other2nd International Conference on Applied Materials and Electronics Engineering, AMEE 2013
國家China
城市Hong Kong
期間13-04-1913-04-20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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