TY - GEN
T1 - Fabrication of simple GaAs solar cell by Zn diffusion method
AU - Chang, Sheng Po
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier.
AB - We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier.
UR - http://www.scopus.com/inward/record.url?scp=84878342468&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84878342468&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.684.312
DO - 10.4028/www.scientific.net/AMR.684.312
M3 - Conference contribution
AN - SCOPUS:84878342468
SN - 9783037856680
T3 - Advanced Materials Research
SP - 312
EP - 316
BT - Advances in Applied Materials and Electronics Engineering II
T2 - 2nd International Conference on Applied Materials and Electronics Engineering, AMEE 2013
Y2 - 19 April 2013 through 20 April 2013
ER -