Fabrication of single phase p-CuInSe2 nanowire arrays by electrodeposited into anodic alumina templates

Yu Song Cheng, Hao Jan Lang, Mau-phon Houng

研究成果: Article

6 引文 (Scopus)

摘要

Single-phase CuInSe2 nanowire (NW) arrays were prepared at various pH values in a heated electrolyte by using pulse electrodeposition techniques and an anodized aluminum oxide template. X-ray diffraction showed that the CuInSe2 NW nucleation mechanism received H+ constraints when the NWs were deposited at pH 1.7 with a (112) orientation and annealed at 550 °C. The CuInSe2 NW band gap was determined to be approximately 1 eV through optical measurements. Transmission electron microscopy showed that at the pH value of 1.7, small particles of the single-phase CuInSe2 NWs aligned along the crystallographic direction are nucleated to form large particles. Scanning electron microscopy revealed that the NW diameter and the length were 80 nm and 2.3 μm, respectively. From Mott-Schottky and Ohmic contact plots, the CuInSe2 NWs were found to be p-type semiconductors, and their work function was estimated to be approximately 4.69 eV.

原文English
文章編號162103
期刊Applied Physics Letters
107
發行號16
DOIs
出版狀態Published - 2015 十月 19

指紋

nanowires
templates
aluminum oxides
fabrication
p-type semiconductors
optical measurement
electrodeposition
electric contacts
plots
nucleation
electrolytes
transmission electron microscopy
scanning electron microscopy
pulses
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

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abstract = "Single-phase CuInSe2 nanowire (NW) arrays were prepared at various pH values in a heated electrolyte by using pulse electrodeposition techniques and an anodized aluminum oxide template. X-ray diffraction showed that the CuInSe2 NW nucleation mechanism received H+ constraints when the NWs were deposited at pH 1.7 with a (112) orientation and annealed at 550 °C. The CuInSe2 NW band gap was determined to be approximately 1 eV through optical measurements. Transmission electron microscopy showed that at the pH value of 1.7, small particles of the single-phase CuInSe2 NWs aligned along the crystallographic direction are nucleated to form large particles. Scanning electron microscopy revealed that the NW diameter and the length were 80 nm and 2.3 μm, respectively. From Mott-Schottky and Ohmic contact plots, the CuInSe2 NWs were found to be p-type semiconductors, and their work function was estimated to be approximately 4.69 eV.",
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Fabrication of single phase p-CuInSe2 nanowire arrays by electrodeposited into anodic alumina templates. / Cheng, Yu Song; Lang, Hao Jan; Houng, Mau-phon.

於: Applied Physics Letters, 卷 107, 編號 16, 162103, 19.10.2015.

研究成果: Article

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AU - Cheng, Yu Song

AU - Lang, Hao Jan

AU - Houng, Mau-phon

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N2 - Single-phase CuInSe2 nanowire (NW) arrays were prepared at various pH values in a heated electrolyte by using pulse electrodeposition techniques and an anodized aluminum oxide template. X-ray diffraction showed that the CuInSe2 NW nucleation mechanism received H+ constraints when the NWs were deposited at pH 1.7 with a (112) orientation and annealed at 550 °C. The CuInSe2 NW band gap was determined to be approximately 1 eV through optical measurements. Transmission electron microscopy showed that at the pH value of 1.7, small particles of the single-phase CuInSe2 NWs aligned along the crystallographic direction are nucleated to form large particles. Scanning electron microscopy revealed that the NW diameter and the length were 80 nm and 2.3 μm, respectively. From Mott-Schottky and Ohmic contact plots, the CuInSe2 NWs were found to be p-type semiconductors, and their work function was estimated to be approximately 4.69 eV.

AB - Single-phase CuInSe2 nanowire (NW) arrays were prepared at various pH values in a heated electrolyte by using pulse electrodeposition techniques and an anodized aluminum oxide template. X-ray diffraction showed that the CuInSe2 NW nucleation mechanism received H+ constraints when the NWs were deposited at pH 1.7 with a (112) orientation and annealed at 550 °C. The CuInSe2 NW band gap was determined to be approximately 1 eV through optical measurements. Transmission electron microscopy showed that at the pH value of 1.7, small particles of the single-phase CuInSe2 NWs aligned along the crystallographic direction are nucleated to form large particles. Scanning electron microscopy revealed that the NW diameter and the length were 80 nm and 2.3 μm, respectively. From Mott-Schottky and Ohmic contact plots, the CuInSe2 NWs were found to be p-type semiconductors, and their work function was estimated to be approximately 4.69 eV.

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