Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method

Yi Ta Hsieh, Wei Ru Chen, An Ru Lin, Yung-Chun Lee, Hung Yi Lin

研究成果: Conference contribution

1 引文 (Scopus)

摘要

Nano-scale pattern sapphire substrate (NPSS) used in light-emitting diodes (LEDs) was reported that could enhance their light extraction efficiency. This paper describes a novel method to fabricate sub-micrometer surface structures on sapphire substrate. This metal contact printing method can directly transferred a metal film pattern from a silicon mold to a sapphire substrate, and subsequently use the transferred metal film pattern as the etching mask for inductively coupled plasma (ICP) etching on the sapphire substrate. Because of excellent etching selectivity of the metal films, it is easy to obtain deeper etching depth on sapphire. Experimental tests have been successfully fabricated six different feature size hexagon surface structures on a 2 inch sapphire substrate and the etching depth is about 400 nm. The LED structures were grown on the patterned sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The measurement forward voltages of the LEDs grown on different pattern size of the PSS were similar, and it is found that the luminous intensity was increasing with decreasing pattern size. It indicates that the pattern size of the PSS is related to the capability of light extraction, and the maximum increase intensity is 84.7% higher than conventional LEDs.

原文English
主出版物標題NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
頁面703-706
頁數4
DOIs
出版狀態Published - 2011 十月 4
事件6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
持續時間: 2011 二月 202011 二月 23

出版系列

名字NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Other

Other6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
國家Taiwan
城市Kaohsiung
期間11-02-2011-02-23

指紋

printing
micrometers
electric contacts
sapphire
light emitting diodes
fabrication
metals
metal films
etching
hexagons
plasma etching
luminous intensity
metalorganic chemical vapor deposition
masks
selectivity
electric potential
silicon

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Hsieh, Y. T., Chen, W. R., Lin, A. R., Lee, Y-C., & Lin, H. Y. (2011). Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method. 於 NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (頁 703-706). [6017451] (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). https://doi.org/10.1109/NEMS.2011.6017451
Hsieh, Yi Ta ; Chen, Wei Ru ; Lin, An Ru ; Lee, Yung-Chun ; Lin, Hung Yi. / Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method. NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. 頁 703-706 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems).
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title = "Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method",
abstract = "Nano-scale pattern sapphire substrate (NPSS) used in light-emitting diodes (LEDs) was reported that could enhance their light extraction efficiency. This paper describes a novel method to fabricate sub-micrometer surface structures on sapphire substrate. This metal contact printing method can directly transferred a metal film pattern from a silicon mold to a sapphire substrate, and subsequently use the transferred metal film pattern as the etching mask for inductively coupled plasma (ICP) etching on the sapphire substrate. Because of excellent etching selectivity of the metal films, it is easy to obtain deeper etching depth on sapphire. Experimental tests have been successfully fabricated six different feature size hexagon surface structures on a 2 inch sapphire substrate and the etching depth is about 400 nm. The LED structures were grown on the patterned sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The measurement forward voltages of the LEDs grown on different pattern size of the PSS were similar, and it is found that the luminous intensity was increasing with decreasing pattern size. It indicates that the pattern size of the PSS is related to the capability of light extraction, and the maximum increase intensity is 84.7{\%} higher than conventional LEDs.",
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Hsieh, YT, Chen, WR, Lin, AR, Lee, Y-C & Lin, HY 2011, Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method. 於 NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems., 6017451, NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 頁 703-706, 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011, Kaohsiung, Taiwan, 11-02-20. https://doi.org/10.1109/NEMS.2011.6017451

Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method. / Hsieh, Yi Ta; Chen, Wei Ru; Lin, An Ru; Lee, Yung-Chun; Lin, Hung Yi.

NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. p. 703-706 6017451 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems).

研究成果: Conference contribution

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AU - Lee, Yung-Chun

AU - Lin, Hung Yi

PY - 2011/10/4

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N2 - Nano-scale pattern sapphire substrate (NPSS) used in light-emitting diodes (LEDs) was reported that could enhance their light extraction efficiency. This paper describes a novel method to fabricate sub-micrometer surface structures on sapphire substrate. This metal contact printing method can directly transferred a metal film pattern from a silicon mold to a sapphire substrate, and subsequently use the transferred metal film pattern as the etching mask for inductively coupled plasma (ICP) etching on the sapphire substrate. Because of excellent etching selectivity of the metal films, it is easy to obtain deeper etching depth on sapphire. Experimental tests have been successfully fabricated six different feature size hexagon surface structures on a 2 inch sapphire substrate and the etching depth is about 400 nm. The LED structures were grown on the patterned sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The measurement forward voltages of the LEDs grown on different pattern size of the PSS were similar, and it is found that the luminous intensity was increasing with decreasing pattern size. It indicates that the pattern size of the PSS is related to the capability of light extraction, and the maximum increase intensity is 84.7% higher than conventional LEDs.

AB - Nano-scale pattern sapphire substrate (NPSS) used in light-emitting diodes (LEDs) was reported that could enhance their light extraction efficiency. This paper describes a novel method to fabricate sub-micrometer surface structures on sapphire substrate. This metal contact printing method can directly transferred a metal film pattern from a silicon mold to a sapphire substrate, and subsequently use the transferred metal film pattern as the etching mask for inductively coupled plasma (ICP) etching on the sapphire substrate. Because of excellent etching selectivity of the metal films, it is easy to obtain deeper etching depth on sapphire. Experimental tests have been successfully fabricated six different feature size hexagon surface structures on a 2 inch sapphire substrate and the etching depth is about 400 nm. The LED structures were grown on the patterned sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The measurement forward voltages of the LEDs grown on different pattern size of the PSS were similar, and it is found that the luminous intensity was increasing with decreasing pattern size. It indicates that the pattern size of the PSS is related to the capability of light extraction, and the maximum increase intensity is 84.7% higher than conventional LEDs.

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Hsieh YT, Chen WR, Lin AR, Lee Y-C, Lin HY. Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method. 於 NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. p. 703-706. 6017451. (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). https://doi.org/10.1109/NEMS.2011.6017451