Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method

Yi Ta Hsieh, Wei Ru Chen, An Ru Lin, Yung-Chun Lee, Hung Yi Lin

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Nano-scale pattern sapphire substrate (NPSS) used in light-emitting diodes (LEDs) was reported that could enhance their light extraction efficiency. This paper describes a novel method to fabricate sub-micrometer surface structures on sapphire substrate. This metal contact printing method can directly transferred a metal film pattern from a silicon mold to a sapphire substrate, and subsequently use the transferred metal film pattern as the etching mask for inductively coupled plasma (ICP) etching on the sapphire substrate. Because of excellent etching selectivity of the metal films, it is easy to obtain deeper etching depth on sapphire. Experimental tests have been successfully fabricated six different feature size hexagon surface structures on a 2 inch sapphire substrate and the etching depth is about 400 nm. The LED structures were grown on the patterned sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The measurement forward voltages of the LEDs grown on different pattern size of the PSS were similar, and it is found that the luminous intensity was increasing with decreasing pattern size. It indicates that the pattern size of the PSS is related to the capability of light extraction, and the maximum increase intensity is 84.7% higher than conventional LEDs.

原文English
主出版物標題NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
頁面703-706
頁數4
DOIs
出版狀態Published - 2011 10月 4
事件6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
持續時間: 2011 2月 202011 2月 23

出版系列

名字NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Other

Other6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
國家/地區Taiwan
城市Kaohsiung
期間11-02-2011-02-23

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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