Sub-quarter-micron grating patterns with period as fine as 0.22 μm have been obtained by combining DUV holographic lithography and silylation technique for the first time. A traditional chemical amplified resist (JSR KRF/K2G) originally working for single layer process at 248 nm wavelength was used for silylation. The silylation selectivity was improved by process control and a photoresist pattern with an aspect ration of 4 was obtained.
|頁（從 - 到）||173-177|
|出版狀態||Published - 1999 一月 1|
|事件||Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven|
持續時間: 1998 九月 22 → 1998 九月 24
All Science Journal Classification (ASJC) codes