Fabrication of sub-quarter-micron grating patterns by employing DUV holographic lithography

L. A. Wang, Chun-Hung Lin, J. H. Chen

研究成果: Conference article

1 引文 斯高帕斯(Scopus)


Sub-quarter-micron grating patterns with period as fine as 0.22 μm have been obtained by combining DUV holographic lithography and silylation technique for the first time. A traditional chemical amplified resist (JSR KRF/K2G) originally working for single layer process at 248 nm wavelength was used for silylation. The silylation selectivity was improved by process control and a photoresist pattern with an aspect ration of 4 was obtained.

頁(從 - 到)173-177
期刊Microelectronic Engineering
出版狀態Published - 1999 一月 1
事件Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
持續時間: 1998 九月 221998 九月 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

指紋 深入研究「Fabrication of sub-quarter-micron grating patterns by employing DUV holographic lithography」主題。共同形成了獨特的指紋。

  • 引用此