TY - GEN
T1 - Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide
AU - Chuang, H. C.
AU - Sanchez, J.
AU - Liao, A. H.
AU - Shen, C. C.
AU - Huang, C. C.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/8/5
Y1 - 2015/8/5
N2 - In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method containing additives, a common practice in PCB industry. Results showed that the best quality structure for this study was achieved at 2000 psi and 3 A/dm2, which could withstand a current of 10 A before burnout, without the addition of any additives or surfactants and a relatively short electroplating time of 3 hours was also found.
AB - In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method containing additives, a common practice in PCB industry. Results showed that the best quality structure for this study was achieved at 2000 psi and 3 A/dm2, which could withstand a current of 10 A before burnout, without the addition of any additives or surfactants and a relatively short electroplating time of 3 hours was also found.
UR - http://www.scopus.com/inward/record.url?scp=84955473793&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84955473793&partnerID=8YFLogxK
U2 - 10.1109/TRANSDUCERS.2015.7180961
DO - 10.1109/TRANSDUCERS.2015.7180961
M3 - Conference contribution
AN - SCOPUS:84955473793
T3 - 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
SP - 464
EP - 467
BT - 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
Y2 - 21 June 2015 through 25 June 2015
ER -