Fabrication of through-silicon vias (TSV) by nickel electroplating in supercritical CO2

Ho Chiao Chuang, Wei Hong Lai, Chih Chung Huang, Ai Ho Liao, Chih Kuang Yeh

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

3D integrated circuit (IC) structure could provide larger patterning areas by stacking the multi-planar chips, in which the electrical signals can be vertically conducted via through-silicon vias (TSVs). Thus, its advantages are lowered costs and reduced packaging space, size and weight. In this study, the TSVs are fabricated and characterized. Four through holes with a diameter of 70 μm on a silicon wafer are filled by nickel electroplating in supercritical CO2. The chip is cut for observation and examination of the cross-sectional view of the TSVs. The average electrical resistance across the TSVs was measured 0.01Ω. Then the fabricated TSVs can be applied a maximum current of 10 Amps continuously without burnout.

原文English
主出版物標題9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面108-112
頁數5
ISBN(電子)9781479947270
DOIs
出版狀態Published - 2014 九月 23
事件9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States
持續時間: 2014 四月 132014 四月 16

出版系列

名字9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
國家/地區United States
城市Waikiki Beach
期間14-04-1314-04-16

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 電氣與電子工程

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