Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

Cheng Liang Huang; Cheng Shing Hsu

doi:10.1116/1.1286143

Fabrication of ZnO-doped Zr_0.8Sn_0.2TiO₄ thin films by radio frequency magnetron sputtering

Cheng Liang Huang, Cheng Shing Hsu

電機工程學系

研究成果: Conference article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)_0.8 tin (Sn)_0.2 titanium oxide (TiO₄) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

原文	English
頁（從 - 到）	2327-2332
頁數	6
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	18
發行號	5
DOIs	https://doi.org/10.1116/1.1286143
出版狀態	Published - 2000 9月
事件	47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA 持續時間: 2000 10月 2 → 2000 10月 6

All Science Journal Classification (ASJC) codes

凝聚態物理學
表面和介面
表面、塗料和薄膜

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10.1116/1.1286143

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title = "Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering",

abstract = "Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.",

author = "Huang, {Cheng Liang} and Hsu, {Cheng Shing}",

year = "2000",

month = sep,

doi = "10.1116/1.1286143",

language = "English",

volume = "18",

pages = "2327--2332",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

note = "47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing ; Conference date: 02-10-2000 Through 06-10-2000",

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TY - JOUR

T1 - Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

AU - Huang, Cheng Liang

AU - Hsu, Cheng Shing

PY - 2000/9

Y1 - 2000/9

N2 - Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

AB - Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

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U2 - 10.1116/1.1286143

DO - 10.1116/1.1286143

M3 - Conference article

AN - SCOPUS:0034275222

SN - 0734-2101

VL - 18

SP - 2327

EP - 2332

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

T2 - 47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing

Y2 - 2 October 2000 through 6 October 2000

ER -

Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

摘要

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Fabrication of ZnO-doped Zr_0.8Sn_0.2TiO₄ thin films by radio frequency magnetron sputtering