Large-area highly uniform MoS2 thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS2 thin films as buffer layers. MoS2 is a layered material and is not soluble in any solvent and the dispersion will not be uniform which can be solved with our solvent system. To use MoS2 as a buffer layer, many factors are significant in controlling the parameters without affecting the material chemical characteristics. Thermal treatment with modulated sulfurization reforms the grain morphology yielding the flexibility of usage in more applications. MoS2 uniform thin film showed ultra-fast response and recovery rates of approximately 3 and 2.5 s for low concentrations of hydrogen gas and change is sensitivity for a small change in temperature. The uniform scattering with nano-sized grains throughout the film increases the surface area and hence escorts the thin film usage as buffer layers in MISIM structure of memristors. Cost-effective growth, deposition and fabrication techniques is a breakthrough for metal sulfide thin films.
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||Published - 2019 九月 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)