Failure mechanism for GaN-based high-voltage light-emitting diodes

Shoou Jinn Chang; Chung Ying Chang; Chun Lung Tseng; Ching Shing Shen; Bing Yang Chen

doi:10.1109/LPT.2014.2314701

Failure mechanism for GaN-based high-voltage light-emitting diodes

Shoou Jinn Chang, Chung Ying Chang, Chun Lung Tseng, Ching Shing Shen, Bing Yang Chen

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We report a detailed reliability test study on GaN-based high-voltage light-emitting diodes. Under high temperature (i.e., 80 °C) and high current injection (i.e., 100 mA) conditions, it was found that Al metal whiskers were formed from the sidewall of the Cr/Al/Ti/Pt/Au p-finger metal after 120-h burn-in test. It was also found that the whiskers became longer as we increased the burn-in time. Furthermore, it was found that the formation of Al whiskers is directly related to Al migration.

原文	English
文章編號	6783724
頁（從 - 到）	1073-1076
頁數	4
期刊	IEEE Photonics Technology Letters
卷	26
發行號	11
DOIs	https://doi.org/10.1109/LPT.2014.2314701
出版狀態	Published - 2014 6月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2014.2314701

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AU - Chang, Chung Ying

AU - Tseng, Chun Lung

AU - Shen, Ching Shing

AU - Chen, Bing Yang

PY - 2014/6/1

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Failure mechanism for GaN-based high-voltage light-emitting diodes

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