Failure mechanism for GaN-based high-voltage light-emitting diodes

Shoou Jinn Chang, Chung Ying Chang, Chun Lung Tseng, Ching Shing Shen, Bing Yang Chen

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We report a detailed reliability test study on GaN-based high-voltage light-emitting diodes. Under high temperature (i.e., 80 °C) and high current injection (i.e., 100 mA) conditions, it was found that Al metal whiskers were formed from the sidewall of the Cr/Al/Ti/Pt/Au p-finger metal after 120-h burn-in test. It was also found that the whiskers became longer as we increased the burn-in time. Furthermore, it was found that the formation of Al whiskers is directly related to Al migration.

原文English
文章編號6783724
頁(從 - 到)1073-1076
頁數4
期刊IEEE Photonics Technology Letters
26
發行號11
DOIs
出版狀態Published - 2014 六月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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