Failure mechanism of electromigration in via sidewall for copper dual damascene interconnection

Y. L. Hsu, Y. K. Fang, Y. T. Chiang, S. F. Chen, Yu-Cheng Lin, T. H. Chou, S. H. Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We have studied the effects of step coverage of TaN diffusion barrier layer on Cu electromigration (EM) in detail and found that the EM lifetime strongly depends on the step coverage of via sidewall thickness. We conclude that the EM failures are caused by mechanisms such as unbalanced thermal stress, thermal expansion between Cu and TaN, and surface morphology of TaN including surface roughness and grain sizes. These factors were investigated and evaluated systematically through transmission electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. Furthermore, we also address the enhancement of step coverage to examine Cu EM performance by performing a lifetime experiment, and suggest that the step coverage of TaN barrier becomes an important process integration subject for sub- 0.13 μm and beyond technologies.

原文English
文章編號064608JES
期刊Journal of the Electrochemical Society
153
發行號8
DOIs
出版狀態Published - 2006 八月 1
對外發佈

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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