摘要
We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50-200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.
原文 | English |
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頁(從 - 到) | 515-517 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 71 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1997 7月 28 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)