Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

A. G.U. Perera, W. Z. Shen, W. C. Mallard, M. O. Tanner, K. L. Wang

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50-200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.

原文English
頁(從 - 到)515-517
頁數3
期刊Applied Physics Letters
71
發行號4
DOIs
出版狀態Published - 1997 7月 28

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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