Fast identification of operating current for toggle MRAM by spiral search

Sheng Hung Wang, Ching Yi Chen, Cheng Wen Wu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Magnetic Random Access Memory (MRAM) is a non-volatile memory which is widely studied for its high speed, high density, small cell size, and almost unlimited endurance. However, for deep-submicron process technologies, significant variation in MRAM cells' operating regions results in write failures in cells and reduces the production yield. Currently, memory designers characterize failed MRAM chips to find a suitable current level for reconfiguring their operating current, which is timeconsuming. In this paper, we propose an efficient operating current search method and a built-in circuit for toggle MRAM, which can rapidly find a customized operating current for each MRAM chip. With the built-in circuit, an MRAM chip can dynamically reconfigure its operating current automatically. Production yield and product life-time thus can be increased.

原文English
主出版物標題Proceedings of the 47th Design Automation Conference, DAC '10
頁面923-928
頁數6
DOIs
出版狀態Published - 2010 九月 7
事件47th Design Automation Conference, DAC '10 - Anaheim, CA, United States
持續時間: 2010 六月 132010 六月 18

出版系列

名字Proceedings - Design Automation Conference
ISSN(列印)0738-100X

Other

Other47th Design Automation Conference, DAC '10
國家United States
城市Anaheim, CA
期間10-06-1310-06-18

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modelling and Simulation

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