Features of the electronic transport of topological semimetal PtSn4and WTe2single crystals

A. N. Perevalova, S. V. Naumov, S. M. Podgornykh, E. B. Marchenkova, V. V. Chistyakov, J. C.A. Huang, V. V. Marchenkov

研究成果: Article同行評審

摘要

PtSn4 and WTe2 single crystals were grown, and the resistivity was studied in the temperature range from 4.2 to 80 K in various magnetic fields up to 10 T in detail. It is suggested that the observed quadratic temperature dependence of the electrical resistivity at low temperatures in zero field can be due to, in addition to electron-electron scattering, the "electron-phonon-surface"interference scattering mechanism. The transition from high effective magnetic fields to weak ones, which is observed in compensated conductors with a closed Fermi surface, was proposed as a possible explanation for the minimum on the temperature dependence of the resistivity of PtSn4 and WTe2 in a magnetic field. The values of the mean free path of current carriers were estimated in these materials.

原文English
文章編號035225
期刊AIP Advances
12
發行號3
DOIs
出版狀態Published - 2022 3月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

指紋

深入研究「Features of the electronic transport of topological semimetal PtSn4and WTe2single crystals」主題。共同形成了獨特的指紋。

引用此