Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn Yuan Lin, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long Qing Chen, Chung Lin Wu, Ying Hao Chu

研究成果: Article

55 引文 (Scopus)

摘要

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

原文English
頁(從 - 到)3357-3364
頁數8
期刊Advanced Materials
25
發行號24
DOIs
出版狀態Published - 2013 六月 25

指紋

Oxides
Ferroelectric materials
Polarization
Metal insulator transition
Doping (additives)
Modulation
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., ... Chu, Y. H. (2013). Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface. Advanced Materials, 25(24), 3357-3364. https://doi.org/10.1002/adma.201300757
Tra, Vu Thanh ; Chen, Jhih Wei ; Huang, Po Cheng ; Huang, Bo Chao ; Cao, Ye ; Yeh, Chao Hui ; Liu, Heng Jui ; Eliseev, Eugene A. ; Morozovska, Anna N. ; Lin, Jiunn Yuan ; Chen, Yi Chun ; Chu, Ming Wen ; Chiu, Po Wen ; Chiu, Ya Ping ; Chen, Long Qing ; Wu, Chung Lin ; Chu, Ying Hao. / Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface. 於: Advanced Materials. 2013 ; 卷 25, 編號 24. 頁 3357-3364.
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abstract = "Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.",
author = "Tra, {Vu Thanh} and Chen, {Jhih Wei} and Huang, {Po Cheng} and Huang, {Bo Chao} and Ye Cao and Yeh, {Chao Hui} and Liu, {Heng Jui} and Eliseev, {Eugene A.} and Morozovska, {Anna N.} and Lin, {Jiunn Yuan} and Chen, {Yi Chun} and Chu, {Ming Wen} and Chiu, {Po Wen} and Chiu, {Ya Ping} and Chen, {Long Qing} and Wu, {Chung Lin} and Chu, {Ying Hao}",
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Tra, VT, Chen, JW, Huang, PC, Huang, BC, Cao, Y, Yeh, CH, Liu, HJ, Eliseev, EA, Morozovska, AN, Lin, JY, Chen, YC, Chu, MW, Chiu, PW, Chiu, YP, Chen, LQ, Wu, CL & Chu, YH 2013, 'Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface', Advanced Materials, 卷 25, 編號 24, 頁 3357-3364. https://doi.org/10.1002/adma.201300757

Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface. / Tra, Vu Thanh; Chen, Jhih Wei; Huang, Po Cheng; Huang, Bo Chao; Cao, Ye; Yeh, Chao Hui; Liu, Heng Jui; Eliseev, Eugene A.; Morozovska, Anna N.; Lin, Jiunn Yuan; Chen, Yi Chun; Chu, Ming Wen; Chiu, Po Wen; Chiu, Ya Ping; Chen, Long Qing; Wu, Chung Lin; Chu, Ying Hao.

於: Advanced Materials, 卷 25, 編號 24, 25.06.2013, p. 3357-3364.

研究成果: Article

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T1 - Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface

AU - Tra, Vu Thanh

AU - Chen, Jhih Wei

AU - Huang, Po Cheng

AU - Huang, Bo Chao

AU - Cao, Ye

AU - Yeh, Chao Hui

AU - Liu, Heng Jui

AU - Eliseev, Eugene A.

AU - Morozovska, Anna N.

AU - Lin, Jiunn Yuan

AU - Chen, Yi Chun

AU - Chu, Ming Wen

AU - Chiu, Po Wen

AU - Chiu, Ya Ping

AU - Chen, Long Qing

AU - Wu, Chung Lin

AU - Chu, Ying Hao

PY - 2013/6/25

Y1 - 2013/6/25

N2 - Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

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