Ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process

Cheng Hsiung Lin, Wen Dung Hsu, I. Nan Lin

研究成果: Conference article同行評審

21 引文 斯高帕斯(Scopus)

摘要

The perovskite LaNiO3 (LNO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films were successfully prepared using metal-organic decomposition (MOD) process. Perovskite LNO phase can be obtained at temperature as low as 600°C (30 s) in rapid thermal annealing (RTA) process. However, additional furnace annealing (FA) at 650°C (60 min) is needed in order to lower the electrical resistivity of the LNO films to ρ ≤ 30 mΩ cm. Pure perovskite PZT films can easily be obtained by either RTA or FA process. Furnace post-annealing process (650°C, 60 min) results in a PZT film possessing significantly better ferroelectric properties than the RTA process (650°C, 60 s). The best properties obtained are remanent polarization Pr = 11.8 μC/cm2, coercive force Ec = 76.0 μC/cm2 and leakage current density JL ≤ 3 × 10-6 A/cm2 (for applied field ≤ 200 kV/cm). Using LNO films as buffer layer does not increase the ferroelectric properties of PZT films, but significantly improves fatigue behavior.

原文English
頁(從 - 到)418-421
頁數4
期刊Applied Surface Science
142
發行號1
DOIs
出版狀態Published - 1999 四月
事件Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark
持續時間: 1998 七月 61998 七月 10

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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