Ferromagnetic ordering in a THAB exfoliated WS₂nanosheet

Because of the important role of two-dimensional (2D) magnetic semiconductors in low-dimensional spintronic devices, the generation of ferromagnetism within an ultrathin semiconducting sheet of a transition metal dichalcogenide is highly desirable. A pristine WS2 sheet is a diamagnetic semiconducting transition metal dichalcogenide with superior electronic properties. In this study, we synthesised a free-standing WS2 sheet by a chemical route followed by electrochemical exfoliation by a giant molecule. During exfoliation of the WS2 crystal, atomic vacancies were created in the sheet with a lower number of layers. To understand the mechanism of exfoliation, we carried out x-ray diffraction, transmission electron microscopy, atomic force microscopy and Raman measurements. The types of atomic vacancies were realised by energy-dispersive x-ray spectroscopy, high-resolution transmission electron microscopy (fast Fourier transform), and x-ray photoelectron spectroscopy studies. We also observed a ferromagnetic ordering within the exfoliated WS2 sheet, which is explained on the basis of the generation of an atomic vacancy induced spin-moment. The transport study of the exfoliated WS2 sheet suggests that the electro-transport behaviour still remains as a semiconductor even after exfoliation. This ferromagnetic semiconducting system will be applicable in spintronic devices and this technique will enrich the literature, particularly for the preparation of a 2D semiconducting ferromagnet in a facile fashion.