Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond films

N. S. Xu, R. V. Latham, Yon-Hua Tzeng

研究成果: Article

223 引文 斯高帕斯(Scopus)

摘要

A high area density of field-induced electron emission sites has been observed on broad-area (12 mm in diameter) CVD diamond films deposited on molybdenum substrates. Furthermore, it was found that the density increased with the electric field applied to the surface of the films. These findings indicate that the CVD diamond film has to be seen as a potentially favoured candidate among electronic materials for the development of new types of cold cathode electron source.

原文English
頁(從 - 到)1596-1597
頁數2
期刊Electronics Letters
29
發行號18
DOIs
出版狀態Published - 1993 一月 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

指紋 深入研究「Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond films」主題。共同形成了獨特的指紋。

  • 引用此