Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

Chih Hung Hsiao; Chien Sheng Huang; Sheng Joue Young; Shoou Jinn Chang; Jia Jyun Guo; Chung Wei Liu; Tsung Ying Yang

doi:10.1109/TED.2013.2257790

Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

Chih Hung Hsiao, Chien Sheng Huang, Sheng Joue Young, Shoou Jinn Chang, Jia Jyun Guo, Chung Wei Liu, Tsung Ying Yang

研究成果: Article › 同行評審

42 引文斯高帕斯（Scopus）

摘要

In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

原文	English
文章編號	6514599
頁（從 - 到）	1905-1910
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	60
發行號	6
DOIs	https://doi.org/10.1109/TED.2013.2257790
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

存取文件

10.1109/TED.2013.2257790

其它文件與鏈接

引用此

@article{cc3da393597142b9a21e17ee4053b8c6,

title = "Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector",

abstract = "In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.",

author = "Hsiao, {Chih Hung} and Huang, {Chien Sheng} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Guo, {Jia Jyun} and Liu, {Chung Wei} and Yang, {Tsung Ying}",

year = "2013",

doi = "10.1109/TED.2013.2257790",

language = "English",

volume = "60",

pages = "1905--1910",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

AU - Hsiao, Chih Hung

AU - Huang, Chien Sheng

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Guo, Jia Jyun

AU - Liu, Chung Wei

AU - Yang, Tsung Ying

PY - 2013

Y1 - 2013

N2 - In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

AB - In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

UR - http://www.scopus.com/inward/record.url?scp=84878138898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878138898&partnerID=8YFLogxK

U2 - 10.1109/TED.2013.2257790

DO - 10.1109/TED.2013.2257790

M3 - Article

AN - SCOPUS:84878138898

SN - 0018-9383

VL - 60

SP - 1905

EP - 1910

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 6514599

ER -

Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此