Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

Chih Hung Hsiao, Chien Sheng Huang, Sheng Joue Young, Shoou Jinn Chang, Jia Jyun Guo, Chung Wei Liu, Tsung Ying Yang

研究成果: Article

28 引文 斯高帕斯(Scopus)

摘要

In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

原文English
文章編號6514599
頁(從 - 到)1905-1910
頁數6
期刊IEEE Transactions on Electron Devices
60
發行號6
DOIs
出版狀態Published - 2013 五月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hsiao, C. H., Huang, C. S., Young, S. J., Chang, S. J., Guo, J. J., Liu, C. W., & Yang, T. Y. (2013). Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector. IEEE Transactions on Electron Devices, 60(6), 1905-1910. [6514599]. https://doi.org/10.1109/TED.2013.2257790