Field-induced resistive switching in metal-oxide interfaces

S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, A. J. Jacobson

研究成果: Article同行評審

242 引文 斯高帕斯(Scopus)

摘要

The field induced resistive switching in metal oxide interfaces was analyzed using electric pulses in perovskite oxides. Switching was restricted to the interfacial layer between a deposited metal electrode and the oxide. The characterization using I-V measurement revealed a conducting mechanism dominated by pulse generated crystalline defects. The results show that the switching can be optimized for device applications by modifying the interface.

原文English
頁(從 - 到)317-319
頁數3
期刊Applied Physics Letters
85
發行號2
DOIs
出版狀態Published - 2004 七月 12

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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