Filament control of field-enhanced WOx resistive memory toward low power applications

Chao Hung Wang; Kuang Hao Chiang; Yu Hsuan Lin; Jau Yi Wu; Yung Han Ho; Erh Kun Lai; Dai Ying Lee; Ming Hsiu Lee; Kuang Yeu Hsieh; Chih Yuan Lu

doi:10.1109/VLSI-TSA.2017.7942470

Filament control of field-enhanced WO_x resistive memory toward low power applications

Chao Hung Wang, Kuang Hao Chiang, Yu Hsuan Lin, Jau Yi Wu, Yung Han Ho, Erh Kun Lai, Dai Ying Lee, Ming Hsiu Lee, Kuang Yeu Hsieh, Chih Yuan Lu

智慧運算碩士學位學程

研究成果: Conference contribution

摘要

Significant improvements for low power WO_x ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is also provided to explain the correlation of forming current and the filament structure including its dimension and the density of oxygen vacancy.

原文	English
主出版物標題	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781509058051
DOIs	https://doi.org/10.1109/VLSI-TSA.2017.7942470
出版狀態	Published - 2017 6月 7
事件	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan 持續時間: 2017 4月 24 → 2017 4月 27

出版系列

名字	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
國家/地區	Taiwan
城市	Hsinchu
期間	17-04-24 → 17-04-27

All Science Journal Classification (ASJC) codes

硬體和架構
電氣與電子工程

存取文件

10.1109/VLSI-TSA.2017.7942470

其它文件與鏈接

引用此

Wang, C. H., Chiang, K. H., Lin, Y. H., Wu, J. Y., Ho, Y. H., Lai, E. K., Lee, D. Y., Lee, M. H., Hsieh, K. Y., & Lu, C. Y. (2017). Filament control of field-enhanced WO_x resistive memory toward low power applications. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 文章 7942470 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942470

Wang, Chao Hung ; Chiang, Kuang Hao ; Lin, Yu Hsuan 等. / Filament control of field-enhanced WO_x resistive memory toward low power applications. 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

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title = "Filament control of field-enhanced WOx resistive memory toward low power applications",

abstract = "Significant improvements for low power WOx ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is also provided to explain the correlation of forming current and the filament structure including its dimension and the density of oxygen vacancy.",

author = "Wang, {Chao Hung} and Chiang, {Kuang Hao} and Lin, {Yu Hsuan} and Wu, {Jau Yi} and Ho, {Yung Han} and Lai, {Erh Kun} and Lee, {Dai Ying} and Lee, {Ming Hsiu} and Hsieh, {Kuang Yeu} and Lu, {Chih Yuan}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",

year = "2017",

month = jun,

day = "7",

doi = "10.1109/VLSI-TSA.2017.7942470",

language = "English",

series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",

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Wang, CH, Chiang, KH, Lin, YH, Wu, JY, Ho, YH, Lai, EK, Lee, DY, Lee, MH, Hsieh, KY & Lu, CY 2017, Filament control of field-enhanced WO_x resistive memory toward low power applications. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942470, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, Taiwan, 17-04-24. https://doi.org/10.1109/VLSI-TSA.2017.7942470

Filament control of field-enhanced WO_x resistive memory toward low power applications. / Wang, Chao Hung; Chiang, Kuang Hao; Lin, Yu Hsuan 等.
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942470 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: Conference contribution

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AU - Wang, Chao Hung

AU - Chiang, Kuang Hao

AU - Lin, Yu Hsuan

AU - Wu, Jau Yi

AU - Ho, Yung Han

AU - Lai, Erh Kun

AU - Lee, Dai Ying

AU - Lee, Ming Hsiu

AU - Hsieh, Kuang Yeu

AU - Lu, Chih Yuan

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AB - Significant improvements for low power WOx ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is also provided to explain the correlation of forming current and the filament structure including its dimension and the density of oxygen vacancy.

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M3 - Conference contribution

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T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

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Wang CH, Chiang KH, Lin YH, Wu JY, Ho YH, Lai EK 等. Filament control of field-enhanced WO_x resistive memory toward low power applications. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942470. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). doi: 10.1109/VLSI-TSA.2017.7942470