FinFET with encased air-gap spacers for high-performance and low-energy circuits

Angada B. Sachid, Yao Min Huang, Yi Ju Chen, Chun Chi Chen, Darsen D. Lu, Min Cheng Chen, Chenming Hu

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

We experimentally demonstrate n-channel bulk FinFET with encased air-gap spacers. Encased air gap in the spacer region is formed by depositing carbon sidewalls, encasing them with silicon nitride (SiN) film and finally removing carbon using mild oxygen plasma. We show that the drive current of air-spacer FinFET is improved by about 40% compared with the baseline bulk FinFET with SiN spacers likely due to enhanced tensile stress in the channel. The parasitic capacitance and ring oscillator delay of FinFET with air-spacers is about 25% and 40% lower compared with that with SiN spacers.

原文English
文章編號7744575
頁(從 - 到)16-19
頁數4
期刊IEEE Electron Device Letters
38
發行號1
DOIs
出版狀態Published - 2017 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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