@inproceedings{288cc1a5eec849388380e34daabf384c,
title = "First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT)",
abstract = "For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration.",
author = "Hong, {T. Z.} and Chang, {W. H.} and A. Agarwal and Huang, {Y. T.} and Yang, {C. Y.} and Chu, {T. Y.} and Chao, {H. Y.} and Y. Chuang and Chung, {S. T.} and Lin, {J. H.} and Luo, {S. M.} and Tsai, {C. J.} and Li, {M. J.} and Yu, {X. R.} and Lin, {N. C.} and Cho, {T. C.} and Sung, {P. J.} and Su, {C. J.} and Luo, {G. L.} and Hsueh, {F. K.} and Lin, {K. L.} and H. Ishii and T. Irisawa and T. Maeda and Wu, {C. T.} and Ma, {W. C.Y.} and Lu, {D. D.} and Kao, {K. H.} and Lee, {Y. J.} and Chen, {H. J.H.} and Lin, {C. L.} and Chuang, {R. W.} and Huang, {K. P.} and S. Samukawa and Li, {Y. M.} and Tarng, {J. H.} and Chao, {T. S.} and M. Miura and Huang, {G. W.} and Wu, {W. F.} and Li, {J. Y.} and Shieh, {J. M.} and Wang, {Y. H.} and Yeh, {W. K.}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",
year = "2020",
month = dec,
day = "12",
doi = "10.1109/IEDM13553.2020.9372001",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "15.5.1--15.5.4",
booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",
address = "United States",
}